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| S510B SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-O * For surface mounted applications * Low profile package * Built-in strain relief * Metal to silicon rectifier. majority carrier conduction * Low power loss,high efficiency * High surge capacity * For use in low voltage high frequency inverters, free wheeling, and polarity protection applications * In compliance with EU RoHS 2002/95/EC directives 0.155(3.94) 0.130(3.30) 0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06) 0.012(0.305) 0.006(0.152) 0.096(2.44) 0.083(2.13) 0.050(1.27) 0.030(0.76) 0.220(5.59) 0.200(5.08) 100 Volts CURRENT 5.0 Amperes MECHANICAL DATA * Case: JEDEC DO-214AA molded plastic * Terminals:Solder plated, solderable per MIL-STD-750, Method 2026 * Polarity : Color band denotes cathode end * Standard packaging: 12mm tape (EIA-481) * Weight: 0.0032 ounce, 0.092 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified. Resistive or inductive load. PA RA M E TE R Ma xi m um Re c urre nt P e a k R e ve rs e Vo lta g e Ma xi m um RM S Vo lta g e Ma xi m um D C B lo c k i ng Vo lta g e Ma xi m um A ve ra g e F o rw a rd Re c ti f i e d C urr e nt P e a k F o rwa r d S urg e C urre nt : 8 . 3 ms s i ng le ha lf s i ne -wa ve s up e ri m p o s e d o n ra t e d lo a d (J E D E C me t ho d ) Ma xi m um F o rwa r d Vo lta g e a t 5 . 0 A (No t e s 1 ) Ma xi m um D C Re ve rs e C urr e nt a t Ra t e d D C B lo c k i ng Vo lt a g e Typ i c a l The r ma l Re s i s t a nc e Op e r a ti ng J unc ti o n Te m p e ra t ure Ra ng e S to r a g e Te mp e ra t ur e Ra ng e T J = 2 5 OC T J = 1 2 5 OC (No t e s 2 ) S YMB OL V RRM V RM S V DC I F ( AV ) IF S M VF IR R J A R J L TJ T S TG VA L UE 100 70 100 5 .0 120 0 .8 5 0 .0 5 2 100 20 -5 5 t o + 1 5 0 -5 5 t o + 1 5 0 UNITS V V V A A V mA O C/W O C C O NOTES: 1. Pulse Test with PW =300sec, 1% Duty Cycle. 2. Mounted on PCB with minmum pad layout. January 11,2011-REV.00 PAGE . 1 S510B 6 CJ, Junction Capacitance (pF) 1000 IF, Forward Current (A) 5 4 3 2 1 0 0 25 50 75 100 125 150 100 10 TJ = 25C f = 1.0 MHz 1 0.1 1 10 100 Lead Temperature (C) VR, Reverse Bias Voltage (V) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance IR,Reverse Current (A) 10000 10 IF, Forward Current (A) 1000 100 10 1 0.1 0.01 20 TJ = 150C TJ = 150C 1 TJ = 125C TJ = 125C TJ = 25C TJ = 75C 0.1 TJ = 75C TJ = 25C 40 60 80 100 0.01 0 0.2 0.4 0.6 0.8 1 Percent of Rated Peak Reverse Voltage (%) VF, Forward Voltage (V) Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics January 11,2011-REV.00 PAGE . 2 |
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